 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AO4817 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO4817 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4817 is Pb-free (meets ROHS & Sony 259 specifications). AO4817L is a Green Product ordering option. AO4817 and AO4817L are electrically identical. Features VDS (V) = -30V ID = -8A (VGS = -20V) RDS(ON) < 18m (VGS = -20V) RDS(ON) < 21m (VGS = -10V) ESD Rating: 1.5KV HBM D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 25 -8 -6.9 -40 2 1.44 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 50 73 31 Max 62.5 110 40 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4817 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-10V, ID=-8A VGS=-4.5V, ID=-4A VDS=-5V, ID=-8A Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-20V, ID=-8A TJ=125C -1 -40 14.1 20 17.1 44 15 -1 -2.6 1760 360 255 6.4 30 7 8 12.5 10.5 40 23 24 16 2200 18 25 21 -2.8 Min -30 -1 -5 1 -3 Typ Max Units V A A V A m m m S V A pF pF pF nC nC nC ns ns ns ns 30 ns nC gFS VSD IS Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 8 38 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=-10V, VDS=-15V, ID=-8A VGS=-10V, VDS=-15V, RL=1.8, RGEN=3 IF=-8A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/s 2 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 2 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4817 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V -6V 20 -ID (A) 15 -4.5V 10 VGS=-4V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 20 19 RDS(ON) (m) 18 17 16 15 14 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 ID=-8A 1.0E+00 1.0E-01 -IS (A) 125C VGS=-20V Normalized On-Resistance VGS=-10V 1.6 VGS=-20V ID=-8A VGS=-10V ID=-8A 5 0 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 25C -ID(A) 10 125C 25 -5V 20 VDS=-5V 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 60 50 RDS(ON) (m) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 40 1.0E-02 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1.0E-03 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 30 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 125C 1.0E-04 25C 20 1.0E-05 25C 10 0 5 10 15 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4817 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 -VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 35 -Qg (nC) Figure 7: Gate-Charge Characteristics 2500 VDS=-15V ID=-8A Capacitance (pF) 2000 1500 1000 Coss 500 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Crss Ciss 100.0 RDS(ON) limited 100s 1ms 10ms 0.1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s DC Power (W) 10s 40 TJ(Max)=150C TA=25C -ID (Amps) 10.0 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, PD FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.1 Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 1000 T Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
Price & Availability of AO4817L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |